A plasma processing apparatus includes a chamber, a substrate support in the chamber and including a lower electrode, an upper electrode above the substrate support, a source radio-frequency generator that provides a source radio-frequency signal to the upper or lower electrode to generate a plasma in the chamber, an impedance matcher electrically coupled to a transmission line between the source radio-frequency generator and the upper or lower electrode and including a first low-speed matching circuit and a first high-speed matching circuit coupled in parallel, a bias generator that provides a bias signal to the lower electrode, and a controller that causes the first low-speed matching circuit to perform a low-speed matching operation on the source radio-frequency signal in a first period and causes the first high-speed matching circuit to perform a high-speed matching operation on the source radio-frequency signal in a second period following the first period.