A semiconductor device is provided. The semiconductor device comprises a semiconductor die comprising a semiconductor substrate and a plurality of transistors arranged at a front side of the semiconductor substrate. Further, the semiconductor die comprises a first electrically conductive structure extending from the front side of the semiconductor substrate to a backside of the semiconductor substrate and a second electrically conductive structure extending from the front side of the semiconductor substrate to the backside of the semiconductor substrate. The semiconductor device further comprises an interposer directly attached to the backside of the semiconductor substrate. The interposer comprises a first trace electrically connected to the first electrically conductive structure of the semiconductor die. Further the interposer comprises the first trace or a second trace electrically connected to the second electrically conductive structure of the semiconductor die.