Abstract
Examples of the present disclosure disclose a memory device and an operation method thereof, and related structures. An interface of the memory device includes a first circuit and is configured to: receive a first operation command and a second operation command, wherein the first operation command is to indicate to perform a first operation on the memory device, the second operation command is to indicate to turn off the first circuit in the memory device, and the first circuit includes a circuit that may not be used when the first operation is performed on the memory device; and receive a third operation command, wherein the third operation command is to indicate to turn on the first circuit.
Full Text
What is claimed is:
Examples of the present disclosure disclose a memory device and an operation method thereof, and related structures. An interface of the memory device includes a first circuit and is configured to: receive a first operation command and a second operation command, wherein the first operation command is to indicate to perform a first operation on the memory device, the second operation command is to indicate to turn off the first circuit in the memory device, and the first circuit includes a circuit that may not be used when the first operation is performed on the memory device; and receive a third operation command, wherein the third operation command is to indicate to turn on the first circuit.
Timeline
Filed
02/19/2026Published
06/25/2026Granted
Not AvailableIPC Codes(4)
G06F 12/02:Addressing or allocation; Relocation (program address sequencing G06F 9/00; arrangements for selecting an address in a digital store G11C 8/00)
G11C 16/04:using variable threshold transistors, e.g. FAMOS
G11C 16/30:Power supply circuits