A semiconductor element includes a semiconductor substrate having: an IGBT region that overlaps with a collector region; and a diode region that overlaps with a cathode region. Inter-trench semiconductor regions include a hole injection restriction structure having: an n-type barrier region in contact with a body region from below; and a pillar region that extends from the barrier region to an emitter electrode and in Schottky contact with the emitter electrode. The IGBT region has a boundary region formed by the inter-trench semiconductor regions located between a main region and the diode region. The hole injection restriction structure is provided in the inter-trench semiconductor regions within the diode region and the boundary region.