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/Image Sensor For Securing Image Having High Dynamic Illumination Range
Abstract

An image sensor includes pixels. Each pixel includes a first photodiode, a second photodiode, an overflow transistor having one end connected to the second photodiode, a storage capacitor, a capacitor connection transistor having a first end connected to the storage capacitor and a second end connected to the second photodiode, a first transistor connected to the first photodiode, a second transistor connected to the second photodiode, a first floating node connected to the first photodiode through the first transistor, a second floating node connected to the second photodiode through the second transistor, a conversion gain transistor between the first floating node and the second floating node, a driving transistor connected to the first photodiode, and a selection transistor connected to the driving transistor. The first photodiode has a larger light receiving area than the second photodiode.

Full Text

What is claimed is:

An image sensor includes pixels. Each pixel includes a first photodiode, a second photodiode, an overflow transistor having one end connected to the second photodiode, a storage capacitor, a capacitor connection transistor having a first end connected to the storage capacitor and a second end connected to the second photodiode, a first transistor connected to the first photodiode, a second transistor connected to the second photodiode, a first floating node connected to the first photodiode through the first transistor, a second floating node connected to the second photodiode through the second transistor, a conversion gain transistor between the first floating node and the second floating node, a driving transistor connected to the first photodiode, and a selection transistor connected to the driving transistor. The first photodiode has a larger light receiving area than the second photodiode.
Timeline
Filed
02/18/2026
Published
06/25/2026
Granted
Not Available
IPC Codes(5)
H04N 25/59:by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
H04N 25/771:comprising storage means other than floating diffusion
H04N 25/772:comprising A/D, V/T, V/F, I/T or I/F converters