A memory cell is capable of reliably injecting charges into a floating gate even when a film thickness of a gate insulating film is increased. The memory cell has a configuration in which a program transistor is constituted by a PMOS transistor, and electrons can be injected into a floating gate FG by hot electron injection using CHE. Accordingly, in the memory cell, even when film thicknesses of the gate insulating films are increased, the charges can be reliably injected into the floating gate FG.