Abstract
A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
Full Text
What is claimed is:
A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
Timeline
Filed
02/17/2026Published
06/25/2026Granted
Not AvailableIPC Codes(6)
H10N 50/01:Manufacture or treatment
G11C 11/16:using elements in which the storage effect is based on magnetic spin effect
H01F 10/32:Spin-exchange-coupled multilayers, e.g. nanostructured superlattices