A film forming method includes: a) placing a substrate on a stage inside a processing container, in which the stage configured to place the substrate on the stage and connected to a ground via a first electrical path is disposed, a conductive ring connected to the ground via a second electrical path is disposed around the stage, and an electrode is disposed to face the stage; and b) forming graphene on the substrate by while supplying a process gas including a carbon-containing gas into the processing container, setting an impedance of the first electrical path to be higher than an impedance of the second electrical path, and supplying power having a frequency of a very high frequency (VHF) band or lower to the electrode to generate plasma inside the processing container.