A method for manufacturing a semiconductor substrate includes applying a composition for film formation to a substrate. The composition for film formation includes: a metal compound including a metal atom and an organic acid, and a solvent. The organic acid is represented by formula (1). R1 is a hydroxy group, a nitro group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; Ar1 is an r+s+t-valent aromatic ring structure having 3 to 30 carbon atoms; X is a crosslinkable group; L1 is a single bond or a divalent linking group; t is an integer of 0 to 2; r is an integer of 1 to 4; and s is an integer of 1 to 4.