Abstract
Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.
Full Text
What is claimed is:
Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.
Timeline
Filed
02/18/2026Published
06/25/2026Granted
Not AvailableIPC Codes(4)
G03F 7/039:Macromolecular compounds which are photodegradable, e.g. positive electron resists (takes precedence G03F 7/075; macromolecular quinonediazides G03F 7/023)
G03F 7/004:Photosensitive materials (, take precedence G03F 7/12, G03F 7/14)
G03F 7/32:Liquid compositions therefor, e.g. developers