Abstract
A method for fabricating semiconductor devices includes forming a stack structure protruding from a substrate and including a plurality of first semiconductor layers and a plurality of second semiconductor layers stacked on top of one another. The method includes forming an isolation structure overlaying the substrate and a lower portion of the stack structure. The method includes implanting dopants into at least an upper portion of the isolation structure.
Full Text
What is claimed is:
A method for fabricating semiconductor devices includes forming a stack structure protruding from a substrate and including a plurality of first semiconductor layers and a plurality of second semiconductor layers stacked on top of one another. The method includes forming an isolation structure overlaying the substrate and a lower portion of the stack structure. The method includes implanting dopants into at least an upper portion of the isolation structure.
Timeline
Filed
02/27/2026Published
07/02/2026Granted
Not AvailableIPC Codes(7)
H10D 30/43:having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
H10D 30/01:Manufacture or treatment
H10D 30/67:Thin-film transistors [TFT]