Abstract
A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.
Full Text
What is claimed is:
A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.
Timeline
Filed
02/27/2026Published
07/02/2026Granted
Not AvailableIPC Codes(5)
H10N 70/00:Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00)
H10B 63/00:Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
H10N 70/20:Multistable switching devices, e.g. memristors