Disclosed are a layer structure including a dielectric layer, a method of manufacturing the dielectric layer, an electronic device including the dielectric layer, and an electronic apparatus including the electronic device. The dielectric layer according to at least one embodiment includes a first layer having a dielectric constant greater than that of silicon oxide and is undoped, a second layer configured to enhance a rutile phase of the first layer, and a third layer configured to increase a bandgap of the first layer. The method of manufacturing a dielectric layer according to an embodiment includes forming a first layer having a dielectric constant greater than that of silicon oxide; forming a phase stabilization layer for stabilizing a rutile phase of the first layer and forming a high-bandgap layer for increasing a bandgap of the first layer.