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/Photodetection Element And Electronic Device
Abstract

A photodetection element according to the present disclosure includes first, second, and third photoelectric conversion units that photoelectrically convert light in first, second, and third wavelength ranges respectively, a color splitter layer, and an antireflection film. The first photoelectric conversion unit is arranged side by side with the second and third photoelectric conversion units The color splitter layer is on a light incident side of the first, second, and third photoelectric conversion units. The antireflection film is on a light incident side of the color splitter layer. The antireflection film arranged on the light incident side of the first photoelectric conversion unit, the antireflection film arranged on a light incident side of the second photoelectric conversion unit, and the antireflection film arranged on a light incident side of the third photoelectric conversion unit have different respective configurations.

Full Text

What is claimed is:

A photodetection element according to the present disclosure includes first, second, and third photoelectric conversion units that photoelectrically convert light in first, second, and third wavelength ranges respectively, a color splitter layer, and an antireflection film. The first photoelectric conversion unit is arranged side by side with the second and third photoelectric conversion units The color splitter layer is on a light incident side of the first, second, and third photoelectric conversion units. The antireflection film is on a light incident side of the color splitter layer. The antireflection film arranged on the light incident side of the first photoelectric conversion unit, the antireflection film arranged on a light incident side of the second photoelectric conversion unit, and the antireflection film arranged on a light incident side of the third photoelectric conversion unit have different respective configurations.
Timeline
Filed
02/27/2026
Published
07/02/2026
Granted
Not Available
IPC Codes(2)
H10F 39/18:Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
H10F 39/00:Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group e.g. radiation detectors comprising photodiode arrays