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/Semiconductor Device And Method Of Fabricating The Same
Abstract

A semiconductor device comprising a substrate, lower electrodes vertically extended on the substrate and horizontally spaced apart from each other, a conductive pattern provided on the substrate to conformally cover the lower electrodes, supporting patterns provided to penetrate the conductive pattern and connected to portions of side surfaces of the lower electrodes, and conductive islands disposed on surfaces of the supporting patterns. The conductive islands may be distributed on the surfaces of the supporting patterns to be spaced apart from each other, and the conductive pattern may be spaced apart from and electrically disconnected from the conductive islands.

Full Text

What is claimed is:

A semiconductor device comprising a substrate, lower electrodes vertically extended on the substrate and horizontally spaced apart from each other, a conductive pattern provided on the substrate to conformally cover the lower electrodes, supporting patterns provided to penetrate the conductive pattern and connected to portions of side surfaces of the lower electrodes, and conductive islands disposed on surfaces of the supporting patterns. The conductive islands may be distributed on the surfaces of the supporting patterns to be spaced apart from each other, and the conductive pattern may be spaced apart from and electrically disconnected from the conductive islands.
Timeline
Filed
02/27/2026
Published
07/02/2026
Granted
Not Available
IPC Codes(2)
H10D 1/00:Resistors, capacitors or inductors
H10D 1/68:Capacitors having no potential barriers