Abstract
A semiconductor device comprising a substrate, lower electrodes vertically extended on the substrate and horizontally spaced apart from each other, a conductive pattern provided on the substrate to conformally cover the lower electrodes, supporting patterns provided to penetrate the conductive pattern and connected to portions of side surfaces of the lower electrodes, and conductive islands disposed on surfaces of the supporting patterns. The conductive islands may be distributed on the surfaces of the supporting patterns to be spaced apart from each other, and the conductive pattern may be spaced apart from and electrically disconnected from the conductive islands.
Full Text
What is claimed is:
A semiconductor device comprising a substrate, lower electrodes vertically extended on the substrate and horizontally spaced apart from each other, a conductive pattern provided on the substrate to conformally cover the lower electrodes, supporting patterns provided to penetrate the conductive pattern and connected to portions of side surfaces of the lower electrodes, and conductive islands disposed on surfaces of the supporting patterns. The conductive islands may be distributed on the surfaces of the supporting patterns to be spaced apart from each other, and the conductive pattern may be spaced apart from and electrically disconnected from the conductive islands.
Timeline
Filed
02/27/2026Published
07/02/2026Granted
Not AvailableIPC Codes(2)
H10D 1/00:Resistors, capacitors or inductors
H10D 1/68:Capacitors having no potential barriers