Abstract
Integrated circuit devices may include a transistor, a passive device, a substrate extending between the transistor and the passive device and a power rail. The passive device may be spaced apart from the substrate. Each of the passive device and the power rail may have a first surface facing the substrate, and the first surface of the passive device is closer than the first surface of the power rail to the substrate.
Full Text
What is claimed is:
Integrated circuit devices may include a transistor, a passive device, a substrate extending between the transistor and the passive device and a power rail. The passive device may be spaced apart from the substrate. Each of the passive device and the power rail may have a first surface facing the substrate, and the first surface of the passive device is closer than the first surface of the power rail to the substrate.
Timeline
Filed
02/27/2026Published
07/02/2026Granted
Not AvailableIPC Codes(5)
H10W 20/41:characterised by their conductive parts
H10D 84/01:Manufacture or treatment
H10D 84/03:using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology