Abstract
To provide a semiconductor device that includes: a semiconductor substrate provided with a semiconductor portion that is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region; an insulating film provided on the semiconductor portion; a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view; and a plated electrode provided at at least a portion of an inside of the opening using the metal electrode as a material to be plated.
Full Text
What is claimed is:
To provide a semiconductor device that includes: a semiconductor substrate provided with a semiconductor portion that is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region; an insulating film provided on the semiconductor portion; a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view; and a plated electrode provided at at least a portion of an inside of the opening using the metal electrode as a material to be plated.
Timeline
Filed
03/09/2026Published
07/09/2026Granted
Not AvailableIPC Codes(4)
H10D 84/60:characterised by the integration of at least one component covered by groups or e.g. integration of BJTs (takes precedence H10D 84/40)
H10D 12/00:Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
H10D 12/01:Manufacture or treatment