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/Magnetic Storage Unit And Preparation Method Of Magnetic Storage Unit
Abstract

The present disclosure provides a magnetic storage unit. The magnetic storage unit includes: a substrate layer, including two spaced bottom electrodes; a spin-orbit torque layer, disposed on an upper surface of the substrate layer, and at least covering the two bottom electrodes; and a magnetic tunnel junction, disposed on an upper surface of the spin-orbit torque layer, and at least covering a range where the two bottom electrodes are located.

Full Text

What is claimed is:

The present disclosure provides a magnetic storage unit. The magnetic storage unit includes: a substrate layer, including two spaced bottom electrodes; a spin-orbit torque layer, disposed on an upper surface of the substrate layer, and at least covering the two bottom electrodes; and a magnetic tunnel junction, disposed on an upper surface of the spin-orbit torque layer, and at least covering a range where the two bottom electrodes are located.
Timeline
Filed
03/19/2026
Published
07/09/2026
Granted
Not Available
IPC Codes(3)
H10B 61/00:Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
H10N 50/01:Manufacture or treatment
H10N 50/10:Magnetoresistive devices