Abstract
The present disclosure provides a magnetic storage unit. The magnetic storage unit includes: a substrate layer, including two spaced bottom electrodes; a spin-orbit torque layer, disposed on an upper surface of the substrate layer, and at least covering the two bottom electrodes; and a magnetic tunnel junction, disposed on an upper surface of the spin-orbit torque layer, and at least covering a range where the two bottom electrodes are located.
Full Text
What is claimed is:
The present disclosure provides a magnetic storage unit. The magnetic storage unit includes: a substrate layer, including two spaced bottom electrodes; a spin-orbit torque layer, disposed on an upper surface of the substrate layer, and at least covering the two bottom electrodes; and a magnetic tunnel junction, disposed on an upper surface of the spin-orbit torque layer, and at least covering a range where the two bottom electrodes are located.
Timeline
Filed
03/19/2026Published
07/09/2026Granted
Not AvailableIPC Codes(3)
H10B 61/00:Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
H10N 50/01:Manufacture or treatment
H10N 50/10:Magnetoresistive devices