Abstract
Some embodiments relate to an integrated chip including a substrate having a first side and a second side opposite the first side. The integrated chip further includes a first photodetector positioned in a first pixel region within the substrate. A floating diffusion region with a first doping concentration of a first polarity is positioned on the first side of the substrate in the first pixel region. A first body contact region with a second doping concentration of a second polarity different from the first polarity is positioned on the second side of the substrate in the first pixel region.
Full Text
What is claimed is:
Some embodiments relate to an integrated chip including a substrate having a first side and a second side opposite the first side. The integrated chip further includes a first photodetector positioned in a first pixel region within the substrate. A floating diffusion region with a first doping concentration of a first polarity is positioned on the first side of the substrate in the first pixel region. A first body contact region with a second doping concentration of a second polarity different from the first polarity is positioned on the second side of the substrate in the first pixel region.
Timeline
Filed
03/09/2026Published
07/09/2026Granted
Not AvailableIPC Codes(2)
H10F 39/00:Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group e.g. radiation detectors comprising photodiode arrays
H10F 39/18:Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors