Proposed are a thin film having single crystallinity and an excellent crystal orientation property, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film having single crystallinity. The technical gist of the present disclosure includes a thin film having single crystallinity, which is formed by depositing a polycrystalline second material on an upper portion of a substrate including a polycrystalline first material and which has a crystal orientation property satisfying the following Relational Expression 1 at a grain boundary, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film having single crystallinity. 0°<FWHM2≤3°  [Relational Expression 1] (FWHM2 is a full width at half maximum of a distribution curve of a misorientation angle at the grain boundary of the thin film).