There is a plasma processing apparatus including a processing chamber; a first high-frequency power supply; a shower head electrically connected to the first high-frequency power supply and configured to receive a voltage from the first high-frequency power supply; a shaping circuit configured to supply the shower head with a shaped high-frequency voltage generated by cutting a positive voltage component of a high-frequency voltage from the first high-frequency power supply; a placing table disposed below the shower head and configured to support a wafer; a planar electrode disposed between the shower head and the placing table, extending along a surface of the placing table and including a plurality of conductive wires combined in a planar shape; a first potential setting circuit configured to set a potential of the planar electrode; and a second potential setting circuit configured to set a potential of the placing table.