Abstract
A semiconductor device includes: a substrate; a body recess in the substrate; a body dielectric layer over the body recess; an active layer extending in a direction parallel to the substrate over the substrate; a contact node over an end portion of the active layer and perpendicular to the substrate; and a conductive line coupled to the contact node and extended perpendicular to the substrate.
Full Text
What is claimed is:
A semiconductor device includes: a substrate; a body recess in the substrate; a body dielectric layer over the body recess; an active layer extending in a direction parallel to the substrate over the substrate; a contact node over an end portion of the active layer and perpendicular to the substrate; and a conductive line coupled to the contact node and extended perpendicular to the substrate.
Timeline
Filed
03/12/2026Published
07/16/2026Granted
Not AvailableIPC Codes(1)
H10B 12/00:Dynamic random access memory [DRAM] devices