An IC package includes an interconnect having a first platform and a second platform that are spaced apart. The IC package includes a die superposing a portion of the first platform of the interconnect. The die has a field effect transistor (FET), and a matrix of pads for the FET situated on a surface of the die. The matrix of pads having a row of source pads and a row of drain pads. A drain wire bond extends from a first drain pad to a second drain pad of the row of drain pads and to the first platform of the interconnect. A source wire bond extends from a first source pad to a second source pad of the row of source pads, back over the first source pad and is coupled to a connection region of the first platform.