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/Silicon Nitride Sintered Body, Silicon Nitride Substrate, Silicon Nitride Circuit Board, And Semiconductor Device
Abstract

According to one embodiment, in a case where a DC electric field of 5 kV/mm is applied to a silicon nitride sintered body at 25° C., a ratio Q25(600)/Q25(5) of an accumulated charge amount 600 seconds after a start of application to an accumulated charge amount 5 seconds after the start of the application is not less than 1.0 and not more than 3.0. A thermal conductivity of the silicon nitride sintered body is 65 W/m·K or more.

Full Text

What is claimed is:

According to one embodiment, in a case where a DC electric field of 5 kV/mm is applied to a silicon nitride sintered body at 25° C., a ratio Q25(600)/Q25(5) of an accumulated charge amount 600 seconds after a start of application to an accumulated charge amount 5 seconds after the start of the application is not less than 1.0 and not more than 3.0. A thermal conductivity of the silicon nitride sintered body is 65 W/m·K or more.
Timeline
Filed
03/12/2026
Published
07/16/2026
Granted
Not Available
IPC Codes(4)
C04B 35/587:Fine ceramics
B32B 15/04:comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
C04B 37/02:with metallic articles