Abstract
Semiconductor power devices having lower resistance and higher breakdown voltage are disclosed. Methods of operating the semiconductor power devices are disclosed.
Full Text
What is claimed is:
Semiconductor power devices having lower resistance and higher breakdown voltage are disclosed. Methods of operating the semiconductor power devices are disclosed.
Timeline
Filed
03/12/2026Published
07/16/2026Granted
Not AvailableIPC Codes(4)
H10D 64/27:Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
H03K 17/687:the devices being field-effect transistors
H10D 30/65:Lateral DMOS [LDMOS] FETs