A method of extending a lifetime of a memory cell is provided. The method includes detecting, by a memory controller, whether a memory cell has failed or not; repairing, by the memory controller, the memory cell by applying a first pulse having a first amplitude to the memory cell, in response to determining that the memory cell has failed; and writing, by the memory controller, input data to the memory cell by applying a second pulse having a second amplitude less than the first amplitude, in response to repairing the memory cell. In one expect, the detecting includes writing, by the memory controller, additional input data to the memory cell; reading, by the memory controller, data stored by the memory cell; comparing, by the memory controller, the data stored by the memory cell with the additional input data; and determining whether the memory cell has failed according to the comparison.