Abstract
A projection exposure apparatus (1, 101) for semiconductor lithography includes an element (40, 50, 70, 90, 120, 140) with an elastic material. The element (40, 50, 70, 90, 120, 140) has a core region (48, 58, 78, 98, 128, 148) having the elastic material and a cladding region (49, 59, 79, 99, 129, 149) at least partly surrounding the core region. The cladding region (49, 59, 79, 99, 129, 149) has at least one barrier layer (81, 141, 143) and the core region (48, 58, 78, 98, 128, 148) has an elastomer and/or a thermoplastic.
Full Text
What is claimed is:
A projection exposure apparatus (1, 101) for semiconductor lithography includes an element (40, 50, 70, 90, 120, 140) with an elastic material. The element (40, 50, 70, 90, 120, 140) has a core region (48, 58, 78, 98, 128, 148) having the elastic material and a cladding region (49, 59, 79, 99, 129, 149) at least partly surrounding the core region. The cladding region (49, 59, 79, 99, 129, 149) has at least one barrier layer (81, 141, 143) and the core region (48, 58, 78, 98, 128, 148) has an elastomer and/or a thermoplastic.
Timeline
Filed
03/19/2026Published
07/23/2026Granted
Not AvailableIPC Codes(1)
G03F 7/00:Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P 76/00, H05K)