Abstract
A method includes the following steps. A through via and a die are disposed over a polymer layer. A metal oxide layer is formed on sidewalls of the through via. An adhesion promoter layer is formed on sidewalls of the metal oxide layer. An encapsulant is formed to laterally encapsulate the die, the adhesion promoter layer, the metal oxide layer and the through via.
Full Text
What is claimed is:
A method includes the following steps. A through via and a die are disposed over a polymer layer. A metal oxide layer is formed on sidewalls of the through via. An adhesion promoter layer is formed on sidewalls of the metal oxide layer. An encapsulant is formed to laterally encapsulate the die, the adhesion promoter layer, the metal oxide layer and the through via.
Timeline
Filed
03/24/2026Published
07/23/2026Granted
Not AvailableIPC Codes(8)
H10W 20/20:Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
H10W 20/00:Interconnections in chips, wafers or substrates
H10W 70/65:Shapes or dispositions of interconnections