A plasma processing apparatus including a chamber; a substrate support disposed in the chamber and including at least one lower electrode; an upper electrode; an RF signal generator electrically connected to the at least one lower electrode or the upper electrode, and generating an RF signal for generating a plasma in the chamber; a first voltage signal generator electrically connected to the at least one lower electrode and generating a first voltage signal, the first voltage signal having a sequence of first voltage pulses; a second voltage signal generator electrically connected to the upper electrode and generating a second voltage signal; a capacitor; and a rectifying element including a first electrode and a second electrode, the first electrode being electrically connected to a node between the upper electrode and the second voltage signal generator, and the second electrode being electrically connected to a ground potential via the capacitor.