A magnetic memory device includes first and second interconnects, a memory cell, a transistor, a sense amplifier, and a control circuit. The memory cell includes a magnetoresistive effect element and a selector element coupled in series between the first and second interconnects. In a read operation, the control circuit is configured to: charge the first interconnect to a first voltage; discharge, after charging the first interconnect, the first interconnect via the transistor by applying a second voltage to a gate end of the transistor; and cause the sense amplifier to determine data stored in the memory cell based on a voltage difference between the first interconnect discharged via the transistor and the second interconnect.