/Memory Device Comprising Electro-chemical Layer, Method For Manufacturing Memory Device And Method For Driving Memory Device
Abstract
A memory device may include a substrate, a channel layer on a surface of the substrate and including an oxygen ion, a gate electrode on the channel layer, an electro-chemical layer between the channel layer and the gate electrode, and a gate oxide layer between the gate electrode and the electro-chemical layer, wherein the electro-chemical layer has a concentration of oxygen ions less than 90% and is capable of transferring the oxygen ions to the channel layer or receiving the oxygen ions from the channel layer, depending on a voltage applied to the gate electrode.
Full Text
What is claimed is:
A memory device may include a substrate, a channel layer on a surface of the substrate and including an oxygen ion, a gate electrode on the channel layer, an electro-chemical layer between the channel layer and the gate electrode, and a gate oxide layer between the gate electrode and the electro-chemical layer, wherein the electro-chemical layer has a concentration of oxygen ions less than 90% and is capable of transferring the oxygen ions to the channel layer or receiving the oxygen ions from the channel layer, depending on a voltage applied to the gate electrode.
Timeline
Filed
03/26/2026Published
07/30/2026Granted
Not AvailableIPC Codes(2)
H10B 63/00:Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
G11C 13/00:Digital stores characterised by the use of storage elements not covered by groups or