Abstract
A phase change material includes a Ge—Sb—Te phase change base material and a first doping element and a second doping element that are doped into the Ge—Sb—Te phase change base material. The first doping element includes an element Hf, and an atomic percentage of the first doping element is 1.5% to 6.5%. The second doping element includes at least one of an element N, an element C, an element In, and an element Ga, and an atomic percentage of the second doping element is 1.0% to 5%.
Full Text
What is claimed is:
A phase change material includes a Ge—Sb—Te phase change base material and a first doping element and a second doping element that are doped into the Ge—Sb—Te phase change base material. The first doping element includes an element Hf, and an atomic percentage of the first doping element is 1.5% to 6.5%. The second doping element includes at least one of an element N, an element C, an element In, and an element Ga, and an atomic percentage of the second doping element is 1.0% to 5%.
Timeline
Filed
03/27/2026Published
07/30/2026Granted
Not AvailableIPC Codes(6)
H10N 70/00:Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00)
C01B 19/00:Selenium; Tellurium; Compounds thereof
C09K 5/06:the change of state being from liquid to solid or vice-versa