Abstract
The semiconductor module includes a first device that has an IGBT and a second device that has a reflux diode which is anti-parallel connected to the IGBT, which has a forward threshold voltage less than a reverse withstand voltage of the IGBT, and which has a forward breakdown voltage in excess of the reverse withstand voltage of the IGBT.
Full Text
What is claimed is:
The semiconductor module includes a first device that has an IGBT and a second device that has a reflux diode which is anti-parallel connected to the IGBT, which has a forward threshold voltage less than a reverse withstand voltage of the IGBT, and which has a forward breakdown voltage in excess of the reverse withstand voltage of the IGBT.
Timeline
Filed
03/26/2026Published
07/30/2026Granted
Not AvailableIPC Codes(5)
H10W 90/00:Package configurations
H10D 8/60:Schottky-barrier diodes
H10D 12/00:Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]