/Direct Bonding For Embedded Bridges With Vias
Abstract

Embodiments disclosed herein include package substrates with bridge dies. In an embodiment, an apparatus comprises a first layer that is a glass layer. A via is provided through the first layer, where the via is electrically conductive. In an embodiment, a second layer is over the first layer, and the second layer comprises an organic dielectric material. In an embodiment, a cavity is provided in the second layer, where the via is within a footprint of the cavity. In an embodiment, a die is in the cavity. In an embodiment, the die is electrically coupled to the via.

Full Text

What is claimed is:

Embodiments disclosed herein include package substrates with bridge dies. In an embodiment, an apparatus comprises a first layer that is a glass layer. A via is provided through the first layer, where the via is electrically conductive. In an embodiment, a second layer is over the first layer, and the second layer comprises an organic dielectric material. In an embodiment, a cavity is provided in the second layer, where the via is within a footprint of the cavity. In an embodiment, a die is in the cavity. In an embodiment, the die is electrically coupled to the via.
Timeline
Filed
03/26/2026
Published
07/30/2026
Granted
Not Available
IPC Codes(7)
H10W 70/65:Shapes or dispositions of interconnections
H10W 20/20:Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
H10W 70/60:Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W 70/40)