A semiconductor device includes a chip having a principal surface, a semiconductor region of a first conductivity type formed in a surface layer portion of the principal surface, and a device structure having a source structure formed in the semiconductor region at an inner portion of the principal surface. A peripheral edge source electrode portion having a first outer edge is arranged on a peripheral edge portion of the principal surface and electrically connected to the source structure. A terminal region of a second conductivity type is formed in the semiconductor region at the peripheral edge portion and electrically connected to the peripheral edge source electrode portion. The terminal region includes a second outer edge positioned closer to a peripheral edge of the principal surface than the first outer edge, wherein a distance between the first and second outer edges is not less than 10 μm.