Abstract
A semiconductor device includes a chip having a main surface, a capacitor structure of a trench electrode type which is formed in the main surface and to which a first potential is to be applied, a dielectric film covering the capacitor structure on the main surface, and a pad electrode which is arranged on the dielectric film so as to form a capacitive coupling with the capacitor structure via the dielectric film, and to which a second potential different from the first potential is to be applied.
Full Text
What is claimed is:
A semiconductor device includes a chip having a main surface, a capacitor structure of a trench electrode type which is formed in the main surface and to which a first potential is to be applied, a dielectric film covering the capacitor structure on the main surface, and a pad electrode which is arranged on the dielectric film so as to form a capacitive coupling with the capacitor structure via the dielectric film, and to which a second potential different from the first potential is to be applied.
Timeline
Filed
03/26/2026Published
07/30/2026Granted
Not AvailableIPC Codes(9)
H10D 84/00:Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D 1/68:Capacitors having no potential barriers
H10D 8/00:Diodes (variable-capacitance diodes H10D 1/64; gated diodes H10D 12/00)