Abstract
A patterning stack is provided. The patterning stack includes a bottom anti-reflective coating (BARC) layer over a substrate, a photoresist layer having a first etching resistance over the BARC layer, and a top coating layer having a second etching resistance greater than the first etching resistance over the photoresist layer. The top coating layer includes a polymer having a polymer backbone including at least one functional unit of high etching resistance and one or more acid labile groups attached to the polymer backbone or a silicon cage compound.
Full Text
What is claimed is:
A patterning stack is provided. The patterning stack includes a bottom anti-reflective coating (BARC) layer over a substrate, a photoresist layer having a first etching resistance over the BARC layer, and a top coating layer having a second etching resistance greater than the first etching resistance over the photoresist layer. The top coating layer includes a polymer having a polymer backbone including at least one functional unit of high etching resistance and one or more acid labile groups attached to the polymer backbone or a silicon cage compound.
Timeline
Filed
03/26/2026Published
07/30/2026Granted
Not AvailableIPC Codes(3)
G03F 7/11:having cover layers or intermediate layers, e.g. subbing layers
G03F 7/09:characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N)
H10P 76/20:of masks comprising organic materials