Abstract
A semiconductor device includes a chip having a main surface, an active region provided in the main surface, a pad region provided outside the active region in the main surface, a transistor structure of an insulated gate type formed in the main surface in the active region, a capacitor structure of a trench electrode type that is formed in the main surface in the pad region and forms capacitive coupling with the chip, and a pad electrode that is arranged on the main surface in the pad region and is electrically connected to the capacitor structure.
Full Text
What is claimed is:
A semiconductor device includes a chip having a main surface, an active region provided in the main surface, a pad region provided outside the active region in the main surface, a transistor structure of an insulated gate type formed in the main surface in the active region, a capacitor structure of a trench electrode type that is formed in the main surface in the pad region and forms capacitive coupling with the chip, and a pad electrode that is arranged on the main surface in the pad region and is electrically connected to the capacitor structure.
Timeline
Filed
03/26/2026Published
07/30/2026Granted
Not AvailableIPC Codes(2)
H10D 84/00:Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D 89/10:Integrated device layouts