/Substrate Processing Apparatus, Substrate Processing Method, Method Of Manufacturing Semiconductor Device And Non-transitory Computer-readable Recording Medium
Abstract

There is provided a technique that includes: a process vessel in which a substrate is accommodated and processed; a plasma generator configured to generate a plasma in the process vessel; a calculator configured to calculate a cumulative amount of an electric power output by the plasma generator during a processing of the substrate; a memory configured to store, as a master cumulative amount, the cumulative amount at an end of the processing of the substrate when a result of the processing of the substrate is normal; and a controller configured to be capable of controlling a progress of the processing of the substrate based on a recipe defining process conditions containing a process time for the substrate, and capable of calculating a correction time for the process time from a difference between the cumulative amount calculated by the calculator and the master cumulative amount.

Full Text

What is claimed is:

There is provided a technique that includes: a process vessel in which a substrate is accommodated and processed; a plasma generator configured to generate a plasma in the process vessel; a calculator configured to calculate a cumulative amount of an electric power output by the plasma generator during a processing of the substrate; a memory configured to store, as a master cumulative amount, the cumulative amount at an end of the processing of the substrate when a result of the processing of the substrate is normal; and a controller configured to be capable of controlling a progress of the processing of the substrate based on a recipe defining process conditions containing a process time for the substrate, and capable of calculating a correction time for the process time from a difference between the cumulative amount calculated by the calculator and the master cumulative amount.
Timeline
Filed
03/31/2026
Published
08/06/2026
Granted
Not Available
IPC Codes(3)
H01J 37/32:Gas-filled discharge tubes (heating by discharge H05B)
H10P 14/00:Formation of materials, e.g. in the shape of layers or pillars
H10P 50/20:Dry etching; Plasma etching; Reactive-ion etching