Abstract
In the present application, a tunnel oxide layer is deposited by means of a combination of PECVD and PEALD. A thin oxide layer with a thickness of 0.1 nm to 0.5 nm is pre-deposited by means of PECVD. In a subsequent PEALD process, the thin oxide layer chemically passivates a surface of a substrate, and then the PEALD process is configured to uniformly deposit a tunnel oxide layer on the basis of the oxide layer. The basic principle of such growth mode is atomic layer deposition.
Full Text
What is claimed is:
In the present application, a tunnel oxide layer is deposited by means of a combination of PECVD and PEALD. A thin oxide layer with a thickness of 0.1 nm to 0.5 nm is pre-deposited by means of PECVD. In a subsequent PEALD process, the thin oxide layer chemically passivates a surface of a substrate, and then the PEALD process is configured to uniformly deposit a tunnel oxide layer on the basis of the oxide layer. The basic principle of such growth mode is atomic layer deposition.
Timeline
Filed
04/16/2026Published
08/06/2026Granted
Not AvailableIPC Codes(1)
H10F 71/00:Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F 19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F 19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F 39/00)