Abstract
A film-forming method for a two-dimensional material layer is provided and includes providing a substrate in which a portion of an underlayer is exposed from a two-dimensional material layer formed over the underlayer; supplying a liquid precursor raw material including a transition metal to the substrate; and supplying a gas including a chalcogen element, thereby forming the two-dimensional material layer over the exposed underlayer.
Full Text
What is claimed is:
A film-forming method for a two-dimensional material layer is provided and includes providing a substrate in which a portion of an underlayer is exposed from a two-dimensional material layer formed over the underlayer; supplying a liquid precursor raw material including a transition metal to the substrate; and supplying a gas including a chalcogen element, thereby forming the two-dimensional material layer over the exposed underlayer.
Timeline
Filed
04/01/2026Published
08/06/2026Granted
Not AvailableIPC Codes(4)
C23C 16/30:Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/455:characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458:characterised by the method used for supporting substrates in the reaction chamber