Abstract
A method for fabricating a semiconductor device includes the steps of providing a substrate having a high-voltage (HV) region and a low-voltage (LV) region, forming a HV device on the HV region, and forming a LV device on the LV region. Preferably, the HV device includes a first gate structure on the substrate and a first epitaxial layer adjacent to the first gate structure, in which a top surface of the first epitaxial layer includes a first V-shape. The LV device includes a second gate structure on the substrate and a second epitaxial layer adjacent to the second gate structure, in which a top surface of the second epitaxial layer includes a first planar surface.
Full Text
What is claimed is:
A method for fabricating a semiconductor device includes the steps of providing a substrate having a high-voltage (HV) region and a low-voltage (LV) region, forming a HV device on the HV region, and forming a LV device on the LV region. Preferably, the HV device includes a first gate structure on the substrate and a first epitaxial layer adjacent to the first gate structure, in which a top surface of the first epitaxial layer includes a first V-shape. The LV device includes a second gate structure on the substrate and a second epitaxial layer adjacent to the second gate structure, in which a top surface of the second epitaxial layer includes a first planar surface.
Timeline
Filed
04/12/2026Published
08/13/2026Granted
Not AvailableIPC Codes(4)
H10D 30/01:Manufacture or treatment
H10D 30/62:Fin field-effect transistors [FinFET]
H10D 64/27:Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates