/Semiconductor Device, Method For Manufacturing Semiconductor Device, Inverter Circuit, Drive Device, Vehicle, And Elevator
Abstract
A semiconductor device according to an embodiment includes a silicon carbide layer, a silicon oxide layer having a peak frequency of a longitudinal wave optical mode of 1245 cm−1 or more at a position 0.5 nm away from the silicon carbide layer, and a region located between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration of 1×1021 cm−3 or more. The concentration distribution of nitrogen in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region.
Full Text
What is claimed is:
A semiconductor device according to an embodiment includes a silicon carbide layer, a silicon oxide layer having a peak frequency of a longitudinal wave optical mode of 1245 cm−1 or more at a position 0.5 nm away from the silicon carbide layer, and a region located between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration of 1×1021 cm−3 or more. The concentration distribution of nitrogen in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region.
Timeline
Filed
04/13/2026Published
08/13/2026Granted
Not AvailableIPC Codes(11)
H10D 64/00:Electrodes of devices having potential barriers
B60R 1/02:Rear-view mirror arrangements (periscope arrangements B60R 1/10)
B61C 3/00:Electric locomotives or railcars (characterised by power transmission B61C 9/00; electrical features B60L, H02)