A method includes providing a semiconductor body having a plurality of type III-nitride semiconductor layers stacked on top of one another, thereby forming a plurality of two-dimensional first charge type gas channels and at least one two-dimensional second charge type gas channel vertically in between two of the two-dimensional first charge type gas channels, forming source and drain electrodes that are laterally spaced apart from one another and in ohmic contact with the plurality of two-dimensional first charge type gas channel, forming a gate structure that is configured to control a conductive connection between the source and drain electrodes by controlling a conductive state of the plurality of two-dimensional first charge type gas channels, and forming a charge dissipation structure that is configured to remove second charge type carriers from the two-dimensional second charge type gas channel during an off-state of the high-electron mobility transistor.