Abstract
The present application discloses a photon detector and a manufacturing method thereof. The manufacturing method of the photon detector includes: obtaining an adapter board, and flip-chip attaching at least one chip and fixedly connecting a plurality of first connecting members to one side of the adapter board; connecting and fixing the one side of the adapter board to a first side of a detection circuit board through the plurality of first connecting members, so as to achieve connection between the chip and the detection circuit board; and fixedly connecting a photoelectric conversion member to a side of the adapter board away from the detection circuit board to obtain the photon detector.
Full Text
What is claimed is:
The present application discloses a photon detector and a manufacturing method thereof. The manufacturing method of the photon detector includes: obtaining an adapter board, and flip-chip attaching at least one chip and fixedly connecting a plurality of first connecting members to one side of the adapter board; connecting and fixing the one side of the adapter board to a first side of a detection circuit board through the plurality of first connecting members, so as to achieve connection between the chip and the detection circuit board; and fixedly connecting a photoelectric conversion member to a side of the adapter board away from the detection circuit board to obtain the photon detector.
Timeline
Filed
04/13/2026Published
08/13/2026Granted
Not AvailableIPC Codes(3)
H10F 39/18:Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
G01T 1/24:with semiconductor detectors
H10F 39/00:Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group e.g. radiation detectors comprising photodiode arrays