/Pixel Structure With Improved Photoelectric Conversion Efficiency In Optically Sensitive Material
Abstract

There is provided a pixel structure including a top electrode, multiple bottom electrodes, an optically sensitive material layer and a metal wire layer. The optically sensitive material layer is arranged between the top electrode and the multiple bottom electrodes. The bottom electrodes corresponding to different pixels are separated from one another and have a gap therebetween. The metal wire layer has a reflective metal layer arranged opposite to the gap. The reflective metal layer reflects residual stray light penetrating the optically sensitive material layer by the surface plasmon resonance effect.

Full Text

What is claimed is:

There is provided a pixel structure including a top electrode, multiple bottom electrodes, an optically sensitive material layer and a metal wire layer. The optically sensitive material layer is arranged between the top electrode and the multiple bottom electrodes. The bottom electrodes corresponding to different pixels are separated from one another and have a gap therebetween. The metal wire layer has a reflective metal layer arranged opposite to the gap. The reflective metal layer reflects residual stray light penetrating the optically sensitive material layer by the surface plasmon resonance effect.
Timeline
Filed
04/14/2026
Published
08/20/2026
Granted
Not Available
IPC Codes(1)
H10F 39/00:Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group e.g. radiation detectors comprising photodiode arrays