/Method Of Processing Substrate, Method Of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Semiconductor Device, And Recording Medium
Abstract
A technique includes preparing a substrate bonded to a semiconductor chip by micro bumps formed on at least one of a first surface of the substrate, which is a bonding surface side that bonds with the semiconductor chip, and a second surface of the semiconductor chip, which is a bonding surface side that bonds with the substrate; and forming, on the first surface and the second surface, a liner film including an insulating film so as to form a surface on which an underfill film can be formed between the substrate and the semiconductor chip.
Full Text
What is claimed is:
A technique includes preparing a substrate bonded to a semiconductor chip by micro bumps formed on at least one of a first surface of the substrate, which is a bonding surface side that bonds with the semiconductor chip, and a second surface of the semiconductor chip, which is a bonding surface side that bonds with the substrate; and forming, on the first surface and the second surface, a liner film including an insulating film so as to form a surface on which an underfill film can be formed between the substrate and the semiconductor chip.
Timeline
Filed
04/14/2026Published
08/20/2026Granted
Not AvailableIPC Codes(3)
H10W 74/01:Manufacture or treatment
H10W 74/15:on active surfaces of flip-chip devices, e.g. underfills
H10W 90/00:Package configurations