A semiconductor device includes a substrate; a first power supply line extending in a first direction in plan view on a first surface of the substrate; a first conductive wall and a second conductive wall formed in the substrate and extending in the first direction shifted from the first power supply line in a second direction different from the first direction in plan view; a first semiconductor layer and a second semiconductor layer provided on a second surface of the substrate on an opposite side of the first surface and overlapping with the first power supply line in plan view; a first through via formed in the substrate and connecting the first power supply line and the second semiconductor layer; a third semiconductor layer formed over the first semiconductor layer; and a fourth semiconductor layer formed over the second semiconductor layer.