A semiconductor device, includes a substrate, a first pattern on the substrate, a second pattern on the substrate, a first source/drain pattern on the first pattern, a second source/drain pattern on the second pattern, an active contact on the first source/drain pattern and second source/drain pattern, a first gate electrode on the first pattern, a second gate electrode on the first pattern, a third gate electrode on the second pattern, a fourth gate electrode on the second pattern, a first gate cutting pattern between the first gate electrode and the third gate electrode, a second gate cutting pattern between the second gate electrode and the fourth gate electrode, a buried interconnection buried in the substrate, and a contact connected to the buried interconnection portion and the active contact, the contact being between the first pattern and the second pattern.