A fast recovery diode may include: a first semiconductor structure including a first layer having a first conductivity type; a first electrode contacting a bottom surface of the first layer; a second semiconductor structure including a second layer having a second conductivity type, the second layer contacting the first semiconductor structure to form a junction; a second electrode of the diode, the second electrode overlying the second semiconductor structure; and a resistive semiconductor region providing a current path between the second electrode and the second semiconductor structure. The resistive semiconductor region may be formed in the second layer with an underlying buried layer defining a current path through the resistive semiconductor region or may be formed of polysilicon with insulating layers defining a current path through the resistive semiconductor region.